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4W Power Amplifier (5.5 - 7.2 GHz) ITT8403FP
FEATURES
* * * * * 40% Typical Power Added Efficiency 18 dB Typical Small Signal Gain 45 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance. Consistent Output Power and Gain makes fixed bias possible.
GND VGG RFIN VGG GND ITT 8403FP
ADVANCED INFORMATION
VDD GND RFOUT N/C VDD
FP Package Pin Configuration
DESCRIPTION
The ITT8403 is a two stage MMIC power amplifier fabricated using GaAsTEK's Self(R) This Aligned MSAG MESFET Process. product is fully matched to 50 ohms on both the input and the output.
MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Rating DC Drain Supply Voltage DC Gate Supply Voltage Power Dissipation (TBASE = 70 C) RF Input Power Junction Temperature Storage Temperature Symbol VDD VGG PDISS PIN TJ TSTG Value 10 -4 200 150 -40 to +100 Unit Vdc Vdc W mW C C
ELECTRICAL CHARACTERISTICS VDD = 8.0 V, IDQ = 900 mA, TA=25 C
Characteristic Frequency Output Power, Saturated Output Power, P1dB Power Gain, P1dB Gain Flatness Over Frequency Power Added Efficiency, P1dB Drain Current at P1dB Third-Order Intercept Point Input Return Loss Harmonics (=6.5 GHz, POUT=35 dBm) Gate Bias Voltage Gate Current Stability Symbol Min Typ Max Unit 5.5 7.2 GHz 36 dBm PSAT 35 dBm P1dB 18 dB G1dB +/- 0.5 dB 40 % 1.0 A IDS, 1dB 45 dBm IP3 IRL -12 -8 dB -35 dBc 2 -2.0 V VGG 2 5 mA IGG All non-harmonically related outputs less than -45 dBc
Specifications Subject to Change Without Notice
902539 A, September 1999
GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 1
4W Power Amplifier (5.5 - 7.2 GHz) ITT8403FP
TYPICAL CHARACTERISTICS
Pout 50 45 40 35 30 25 20 15 10 5 0 4.5 5 5.5 6 6.5 7 7.5 8 Gain PAE 50 45 40 35 30 25 20 15 10 5 0 4.5 5 5.5 6 Pout
ADVANCED INFORMATION
Gain
PAE
POUT (dBm), Gain(dB), PAE
POUT (dBm), Gain(dB), PAE
Frequency (GHz)
Figure 1. Saturated Output Power, Efficiency, and Input Return Loss vs. Frequency
Conditions: VDD = 8V, VGG varies, PIN = 20 dBm
Pout 50 45 40 35 Gain PAE
6.5
7
7.5
8
Frequency (GHz)
Figure 2. Output Power at P-1dB, Efficiency, and Gain vs. Frequency
Conditions: VDD = 8V, VGG varies, PIN varies
0 -2 -4 -6
POUT (dBm), Gain(dB), PAE
S11 (dB)
10 12 14 16 18 20
30 25 20 15 10 5 0
-8 -10 -12 -14 -16 -18 -20 4.5 5 5.5 6 6.5 7 7.5 8
Input Power (dBm)
Figure 3. Output Power, Gain, and Efficiency vs. Input Power
Conditions: VDD = 8V, VGG varies, = 6.5 GHz
Frequency (GHz)
Figure 4. Input Return Loss vs. Frequency at P-1dB
Conditions: VDD = 8V, VGG varies, PIN varies
Specifications Subject to Change Without Notice
902539 A, September 1999
GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 2
4W Power Amplifier (5.5 - 7.2 GHz) ITT8403FP
APPLICATION INFORMATION
ADVANCED INFORMATION
5 7<30$; 7<3 3/&6
Figure 5. `FP' Package Dimensions (Not drawn to scale)
9JJ 9GG
List of components: (4) 0.1 F ceramic chip capacitors Biasing: 1. User must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 2. Nominal bias is VGG= -2.0 volts at +8.0 Volts on VDD. 3. Only one VDD and one VGG must be connected to a power supply; each is internally connected to the other pin.
9JJ
,77 *D$V7(.
9GG
Figure 6. Demo Board diagram
Specifications Subject to Change Without Notice
902539 A, September 1999
GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 3

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